Configuration for optoelectronic device

An optoelectronic device comprising:

• an n-type group III nitride semiconductor layer having a mesa surface and a growth surface located on an opposite side as the mesa surface, wherein the n-type semiconductor layer includes a plurality of voids, each of the plurality of voids having a depth of 0.1-50 microns and a lateral size of 0.1-20 microns;
• a mesa including an active region located adjacent to at least a first portion of the mesa surface of the n-type group III nitride semiconductor layer and having a mesa boundary, wherein the mesa boundary includes a plurality of interconnected fingers, and wherein the n-type semiconductor layer has a shape at least partially defined by the mesa boundary;
• a first n-type contact layer located adjacent to at least a portion of the n-type semiconductor layer entirely distinct from the location of the mesa, wherein the first n-type contact layer forms an ohmic contact with the n-type group III nitride semiconductor layer;
• and
• a second n-type contact layer located adjacent to the n-type semiconductor layer and the first n-type contact layer, wherein the second n-type contact layer directly contacts the first n-type contact layer and is formed of a reflective material different from a material of the first n-type contact layer.

A method of fabricating an optoelectronic device comprising:

• forming a heterostructure including:
• an n-type semiconductor layer having a mesa surface and a growth surface located on an opposite side as the mesa surface;
• and
• a mesa including an active region located adjacent to at least a first portion of the mesa surface of the n-type semiconductor layer and having a mesa boundary, wherein the mesa boundary has a shape including a plurality of interconnected fingers, and wherein the n-type semiconductor layer has a shape at least partially defined by the mesa boundary;
• depositing a first n-type contact layer adjacent to at least a first portion of the n-type semiconductor layer entirely distinct from the location of the mesa;
• and
• depositing a second n-type contact layer adjacent to the n-type semiconductor layer and the first n-type contact layer, wherein the second n-type contact layer directly contacts the first n-type contact layer and is formed of a material different from a material of the first n-type contact layer.