Semiconductor light-emitting device

A semiconductor light-emitting device, comprising:

• a semiconductor layer including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer having a first n-side region surrounded by a stacked film including the light-emitting layer and the second semiconductor layer;
• a fluorescent material layer provided on the first semiconductor layer;
• a p-side electrode provided on the second semiconductor layer;
• an insulating film provided on the p-side electrode;
• an n-side electrode including a first portion, a second portion, and a third portion, the first portion provided on a side face of the first semiconductor layer, the second portion provided in the first n-side region, the third portion overlapping the p-side electrode via the insulating film and connecting the first portion and the second portion to each other;
• a p-side interconnection portion provided on the insulating film and connected to the p-side electrode;
• an n-side interconnection portion provided on the insulating film and connected to the n-side electrode;
• and
• a resin layer provided around the semiconductor layer, an upper face of the resin layer being higher than an upper face of the first semiconductor layer with the fluorescent material layer being above the semiconductor layer.