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US 10,707,375 B2Granted
Light emitting device
AssigneeLG Innotek Co., Ltd.
InventorYoun Joon Sung
Life of this patent
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Abstract
An embodiment provides a light emitting element comprising: a first conductive semiconductor layer including a first layer and a second layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a first electrode and a second electrode arranged on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, wherein the first layer includes a plurality of first grooves, and a growth prevention layer is arranged on the bottom surface and side surfaces of each of the first grooves.
Claims19
A light emitting device comprising:
- a first conductivity-type semiconductor layer including a first layer and a second layer;
- an active layer disposed on the first conductivity-type semiconductor layer;
- a second conductivity-type semiconductor layer disposed on the active layer;
- and
- a first electrode and a second electrode disposed on the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively,
- wherein the first layer includes a plurality of first grooves, and a growth prevention layer is disposed on a bottom surface and a side surface of one of the first grooves, and
- wherein the growth prevention layer has:
- an exterior side surface facing the side surface of the first groove,
- an interior side surface opposite to the side surface of the first groove,
- an exterior bottom surface facing the bottom surface of the first groove,
- an interior bottom surface opposite to the bottom surface of the first groove, a height of a top of the exterior side surface from the interior bottom surface being greater than a height of a top of the interior side surface from the interior bottom surface, and
- an inclined surface extending between the top of the exterior side surface and the top of the interior side surface.
9 more elements
A light emitting device comprising:
- a first conductivity-type semiconductor layer including a first layer and a second layer;
- an active layer disposed on the first conductivity-type semiconductor layer;
- a second conductivity-type semiconductor layer disposed on the active layer;
- and
- a first electrode and a second electrode disposed on the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively,
- wherein:
- the first layer includes a plurality of first grooves,
- a first growth prevention layer and a second growth prevention layer are sequentially disposed on a bottom surface and a side surface of one of the first grooves,
- the first growth prevention layer includes a side segment positioned between the side surface of the first groove and a side segment of the second growth prevention layer, and
- a height of a top of the side segment of the first growth prevention layer from an interior bottom surface of the second growth prevention layer, which is opposite to the bottom surface of the first groove, is greater than a height of a top of the side segment of the second growth prevention layer from the interior bottom surface of the second growth prevention layer.
7 more elements
A light emitting device comprising:
- an insulating substrate;
- a first conductivity-type semiconductor layer disposed on the insulating substrate and including a first layer and a second layer;
- an active layer disposed on the first conductivity-type semiconductor layer;
- a second conductivity-type semiconductor layer disposed on the active layer;
- and
- a first electrode and a second electrode disposed on the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively,
- wherein the first layer includes a plurality of first grooves and a growth prevention layer is disposed on a bottom surface and a side surface of one of the first grooves,
- wherein the growth prevention layer has an inclined surface between a top of an exterior side surface facing the side surface of the first groove and a top of an interior side surface that is opposite to the side surface of the first groove,
- wherein a height of the growth prevention layer between the bottom surface of the first groove and the top of the exterior side surface of the growth prevention layer is greater than a height of the growth prevention layer between the bottom surface of the first groove and the top of the interior side surface of the growth prevention layer, and
- wherein the growth prevention layer includes an exterior bottom surface facing the bottom surface of the first groove and an interior bottom surface that is opposite to the bottom surface of the first groove, and a height from the interior bottom surface of the growth prevention layer to a top of the growth prevention layer is 200 nanometers to 2000 nanometers.
7 more elements
Dependencies are inferred from the claim text.