Contact for silicon heterojunction solar cells

A photovoltaic device, comprising:

• an emitter side superlattice on a first side of a substrate;
• a back side superlattice on a side opposite the first side of the substrate;
• a plurality of wide band gap layers;
• and
• a plurality of narrow band gap layers physically isolated from each other by the plurality of wide band gap layers disposed therebetween in an alternating stack of narrow band gap layers and wide band gap layers on at least one of the emitter side structure and the back side structure, wherein the narrow band gap layers include intrinsic layers and the wide band gap layers include doped layers.

A photovoltaic device, comprising:

• an emitter side structure on a first side of a substrate;
• a back side structure on a side opposite the first side of the substrate;
• wide band gap layers;
• and
• narrow band gap layers physically isolated from each other by the wide band gap layers disposed therebetween on at least one of the emitter side structure and the back side structure, wherein
• the at least one of the emitter side structure and the back side structure includes doped layers and intrinsic layers.