Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsShigeya Kimura, Hisashi Yoshida
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first semiconductor layer, and a second semiconductor layer. The second electrode is separated from the first electrode in a first direction. The first semiconductor layer includes n-type SiC, is provided between the first electrode and the second electrode, and is electrically connected to the first electrode. The second semiconductor layer contacts the first semiconductor layer and the second electrode, is provided between the first semiconductor layer and the second electrode, and includes n-type AlxGa1-xN (0.5≤x≤1). A thickness of the second semiconductor layer is not less than 10 nm and not more than 1 μm.
Claims12
A semiconductor device, comprising:
- a first electrode;
- a second electrode separated from the first electrode in a first direction;
- a first semiconductor layer including n-type SiC, being provided between the first electrode and the second electrode, and being electrically connected to the first electrode;
- and
- a second semiconductor layer contacting the first semiconductor layer and the second electrode, being provided between the first semiconductor layer and the second electrode, and including n-type AlxGa1-xN (0.5≤x≤1), a thickness of the second semiconductor layer being not less than 10 nm and not more than 1 μm.
A semiconductor device, comprising:
- a first electrode;
- a second electrode separated from the first electrode in a first direction;
- a first semiconductor layer including n-type SiC, being provided between the first electrode and the second electrode, and being electrically connected to the first electrode;
- a second semiconductor layer contacting the first semiconductor layer, being provided between the first semiconductor layer and the second electrode, and including n-type AlxGa1-xN (0.5≤x≤1), a thickness of the second semiconductor layer being not less than 10 nm and not more than 1 μm;
- and
- a third semiconductor layer provided between the second semiconductor layer and the second electrode, the third semiconductor layer including a plurality of first semiconductor films and a plurality of second semiconductor films provided alternately along the first direction, the plurality of first semiconductor films including n-type AlyGa1-yN (0<y≤1), the plurality of second semiconductor films including AlzGa1-zN (0≤z<y), a thickness in the first direction of one of the plurality of first semiconductor films being not less than 1 nm and not more than 5 nm, a thickness in the first direction of one of the plurality of second semiconductor films being not less than 1 nm and not more than 10 nm.
Dependencies are inferred from the claim text.