Magnetic memory device and manufacturing method of the same

A magnetic memory device comprising:

• an underlying area integrated on a semiconductor substrate;
• a stacked structure provided on the underlying area and including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer and containing a first compound containing a first cationic element and a first anionic element;
• and
• a predetermined-material layer provided around side surfaces of the stacked structure and containing a second compound containing a second added cationic element and a second added anionic element, wherein
• an absolute value of a valence number of the second added cationic element is less than an absolute value of a valence number of the first cationic element, and an absolute value of a valence number of the second added anionic element is less than an absolute value of a valence number of the first anionic element.