Laterally diffused MOSFET with low Rsp*Qg product
AssigneeSilanna Asia Pte Ltd
InventorDavid Snyder
Life of this patent
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Abstract
An improved laterally diffused MOSFET (LDMOS) device enables an ability to tune some device parameters independently of other device parameters and/or provides a device architecture with component dimensions that significantly improve device performance. The LDMOS device includes a stepped gate having a first portion with a thin gate insulator over a body region and a second portion with a thick gate insulator over part of a drift region. In some embodiments, a gate shield is disposed over another part of the drift region to reduce a gate-drain capacitance of the LDMOS device. In some embodiments, the LDMOS device has a specific resistance (Rsp) of about 5-8 mOhm*mm2, a gate charge (Qg) of about 1.9-2.0 nC/mm2, and an Rsp*Qg product figure of merit of about 10-15 mOhm*nC.
Claims18
A laterally diffused MOSFET device comprising:
- a source region;
- a drain region;
- a body region between the source region and the drain region;
- a drift region between the body region and the drain region;
- a stepped gate having a first portion disposed over the body region and a second portion disposed over a first portion of the drift region, the first and second portions of the stepped gate being continuous with each other;
- a first gate insulator region between the first portion of the stepped gate and the body region, the first gate insulator region having a first thickness;
- a second gate insulator region between the second portion of the stepped gate and the first portion of the drift region, the second gate insulator region having a second thickness greater than the first thickness;
- and
- a gate shield, a first portion of which is disposed over a second portion of the drift region between the stepped gate and the drain region to reduce a gate-drain capacitance of the laterally diffused MOSFET device;
- wherein:
- the laterally diffused MOSFET device has a specific resistance (Rsp) of about 5-8 mOhm*mm2, a gate charge (Qg) of about 1.9-2.0 nC/mm2, and an Rsp*Qg product figure of merit of about 10-15 mOhm*nC.
A laterally diffused MOSFET device comprising:
- a source region;
- a drain region;
- a body region between the source region and the drain region;
- a drift region between the body region and the drain region;
- a stepped gate having a first portion and a second portion adjacent to and continuous with each other;
- a first gate insulator region between the first portion of the stepped gate and the body region;
- and
- a second gate insulator region between the second portion of the stepped gate and at least a first portion of the drift region;
- wherein:
- the laterally diffused MOSFET device has a specific resistance (Rsp) of about 5-8 mOhm*mm2, a gate charge (Qg) of about 1.9-2.0 nC/mm2, and an Rsp*Qg product figure of merit of about 10-15 mOhm*nC.
Dependencies are inferred from the claim text.