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US 10,707,341 B2Granted
Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsYukiyasu Nakao, Kohei Ebihara, Shiro Hino
Life of this patent
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Abstract
A semiconductor device includes: a plurality of semiconductor switching elements that are a plurality of MOSFETs each including a Schottky barrier diode; a first ohmic electrode disposed above a first region of a well region and electrically connected to the first region, the first region being on the opposite side from a predefined region; a first Schottky electrode disposed on a semiconductor layer exposed at the first region of the well region; and a line electrically connected to the first ohmic electrode, the first Schottky electrode, and a source electrode. The device enables reduction of a breakdown in a gate insulating film.
Claims12
A semiconductor device, comprising:
- a semiconductor layer of a first conductivity type;
- a plurality of semiconductor switching elements disposed in a predefined region, in the semiconductor layer, the plurality of semiconductor switching elements being a plurality of metal-oxide-semiconductor field-effect-transistors (MOSFETs) including a source electrode and a gate electrode that are disposed above the predefined region, the plurality of semiconductor switching elements each including a Schottky barrier diode;
- a well region of a second conductivity type that is disposed separate from the predefined region in a plan view, the well region being included in a surface layer of the semiconductor layer;
- a gate line disposed above the well region and electrically connected to the gate electrode;
- a first ohmic electrode disposed above a first region of the well region and electrically connected to the first region, the first region being on the opposite side from the predefined region;
- a first Schottky electrode disposed on the semiconductor layer exposed at the first region of the well region;
- and
- a line electrically connected to the first ohmic electrode, the first Schottky electrode, and the source electrode,
- wherein the first ohmic electrode and the first Schottky electrode are alternately disposed along the gate line in a plan view.
6 more elements
A semiconductor device, comprising:
- a semiconductor layer of a first conductivity type;
- a plurality of semiconductor switching elements disposed in a predefined region, in the semiconductor layer, the plurality of semiconductor switching elements being a plurality of metal-oxide-semiconductor field-effect-transistors (MOSFETs) including a source electrode and a gate electrode that are disposed above the predefined region, the plurality of semiconductor switching elements each including a Schottky barrier diode;
- a well region of a second conductivity type that is disposed separate from the predefined region in a plan view, the well region being included in a surface layer of the semiconductor layer;
- a gate line disposed above the well region and electrically connected to the gate electrode;
- a first ohmic electrode disposed above a first region of the well region and electrically connected to the first region, the first region being on the opposite side from the predefined region;
- a first Schottky electrode disposed on the semiconductor layer exposed at the first region of the well region;
- and
- a line electrically connected to the first ohmic electrode, the first Schottky electrode, and the source electrode,
- wherein the first ohmic electrode is disposed around the first Schottky electrode in a plan view.
6 more elements
A semiconductor device, comprising:
- a semiconductor layer of a first conductivity type;
- a plurality of semiconductor switching elements disposed in a predefined region, in the semiconductor layer, the plurality of semiconductor switching elements being a plurality of metal-oxide-semiconductor field-effect-transistors (MOSFETs) including a source electrode and a gate electrode that are disposed above the predefined region, the plurality of semiconductor switching elements each including a Schottky barrier diode;
- a well region of a second conductivity type that is disposed separate from the predefined region in a plan view, the well region being included in a surface layer of the semiconductor layer;
- a gate line disposed above the well region and electrically connected to the gate electrode;
- a first ohmic electrode disposed above a first region of the well region and electrically connected to the first region, the first region being on the opposite side from the predefined region;
- a first Schottky electrode disposed on the semiconductor layer exposed at the first region of the well region;
- and
- a line electrically connected to the first ohmic electrode, the first Schottky electrode, and the source electrode,
- wherein a connection portion for connecting the first ohmic electrode and the first Schottky electrode with the source electrode is disposed on the opposite side from a gate pad connected to the gate line with respect to the predefined region, the connection portion being a portion of the line.
6 more elements
Dependencies are inferred from the claim text.