Low turn-on voltage silicon carbide rectifiers
AssigneeSemiconductor Components Industries, LLC
InventorAndrei Konstantinov
Life of this patent
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Abstract
In a general aspect, a silicon carbide (SiC) rectifier can include a substrate of a first conductivity type, a drift region of the first conductivity type, a junction field effect transistor (JFET) region of the first conductivity type, a body region of a second conductivity type, an anode implant region of the first conductivity type, and a channel of the first conductivity type. The channel can be in contact with and disposed between the JFET region and the anode implant region. A portion of the channel between the anode implant region and the JFET region can be disposed in the body region, The channel can be configured to be off under zero-bias conditions, and on at a positive turn-on voltage.
Claims20
A silicon carbide (SiC) rectifier comprising:
- a substrate of a first conductivity type, the substrate being included in a cathode terminal of a rectifying diode;
- a drift region of the first conductivity type, the drift region being disposed on the substrate;
- a junction field effect transistor (JFET) region of the first conductivity type, the JFET region being disposed on the drift region;
- a body region of a second conductivity type, the body region being disposed in the JFET region;
- an anode implant region of the first conductivity type, the anode implant region being disposed in the body region, the anode implant region being coupled with an anode terminal of the rectifying diode;
- and
- a channel of the first conductivity type, the channel being in contact with and disposed between the JFET region and the anode implant region, a portion of the channel between the anode implant region and the JFET region being disposed in the body region, the channel being configured to be off under zero-bias conditions, and on at a positive turn-on voltage.
A silicon carbide (SiC) rectifier, comprising:
- a drift region of a first conductivity type;
- a junction field effect transistor (JFET) region of the first conductivity type, the JFET region being disposed on the drift region;
- a body region of a second conductivity type, the body region being disposed in the JFET region;
- an anode implant region of the first conductivity type, the anode implant region being disposed in the body region, the anode implant region being coupled with an anode terminal of a rectifying diode;
- a channel of the first conductivity type being in contact with and disposed between the JFET region and the anode implant region, a portion of the channel between the anode implant region and the JFET region being disposed in the body region, the channel being configured to be off under zero-bias conditions, and on at a positive turn-on voltage;
- and
- a source region of a vertical metal-oxide-semiconductor field-effect transistor (MOSFET), the source region being disposed in the body region, the drift region being common to the rectifying diode and the vertical MOSFET.
A silicon carbide (SiC) rectifier, comprising:
- a drift region of a first conductivity type;
- a junction field effect transistor (JFET) region of the first conductivity type, the JFET region being disposed on the drift region;
- a body region of a second conductivity type, the body region being disposed in the JFET region;
- an anode implant region of the first conductivity type, the anode implant region being disposed in the body region, the anode implant region being coupled with an anode terminal of a rectifying diode;
- a channel of the first conductivity type, being in contact with and disposed between the JFET region and the anode implant region, a portion of the channel between the anode implant region and the JFET region being disposed in the body region, the channel being configured to be off under zero-bias conditions, and on at a positive turn-on voltage;
- and
- a charge balance pillar of the second conductivity type, the charge balance pillar extending from the body region into the drift region.
Dependencies are inferred from the claim text.