Semiconductor device

A semiconductor device, comprising:

• a first region including SiC and including a first partial region, a second partial region, and a third partial region between the first partial region and the second partial region;
• a first electrode, a direction from the first partial region toward the first electrode being aligned with a first direction;
• a second electrode, a direction from the second partial region toward the second electrode being aligned with the first direction, a second direction from the first electrode toward the second electrode crossing the first direction;
• a third electrode, a direction from the third partial region toward the third electrode being aligned with the first direction, a position of the third electrode in the second direction being between a position of the first electrode in the second direction and a position of the second electrode in the second direction;
• a second region including Alx2Ga1-x2N (0.2≤x2<1);
• and
• a third region including Alx3Ga1-x3N (x2<x3≤1), at least a portion of the third region being provided between the first electrode and the second electrode in the second direction, at least a portion of the second region being provided between the third region and the first region.