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US 10,707,338 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeFujitsu Limited
InventorsAtsushi Yamada, Junji Kotani
Life of this patent
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Abstract
A semiconductor device includes a substrate; a first barrier layer containing AlN, over the substrate; a channel layer containing BGaN, over the first barrier layer; and a second barrier layer containing AlN, over the channel layer. A difference between a first lattice constant of the channel layer and a second lattice constant of the first barrier layer is less than or equal to 1.55% of the second lattice constant.
Claims18
A semiconductor device comprising:
- a substrate;
- a first barrier layer containing AlN, over the substrate;
- a channel layer containing BGaN, over the first barrier layer;
- and
- a second barrier layer containing AlN, over the channel layer,
- wherein a difference between a first lattice constant of the channel layer and a second lattice constant of the first barrier layer is less than or equal to 1.55% of the second lattice constant.
3 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a first barrier layer containing AlN, over a substrate;
- forming a channel layer containing BGaN, over the first barrier layer;
- and
- forming a second barrier layer containing AlN, over the channel layer,
- wherein a difference between a first lattice constant of the channel layer and a second lattice constant of the first barrier layer is less than or equal to 1.55% of the second lattice constant.
2 more elements
Dependencies are inferred from the claim text.