One-way switch with a gate referenced to the main back side electrode
AssigneeSTMicroelectronics (Tours) SAS
InventorSamuel Menard
Life of this patent
Estimating the term…
Abstract
A one-way switch has a gate referenced to a main back side electrode. An N-type substrate includes a P-type anode layer covering a back side and a surrounding P-type wall. First and second P-type wells are formed on the front side of the N-type substrate. An N-type cathode region is located in the first P-type well. An N-type gate region is located in the second P-type well. A gate metallization covers both the N-type gate region and a portion of the second P-type well. The second P-type well is separated from the P-type wall by the N-type substrate except at a location of a P-type strip that is formed in the N-type substrate and connects a portion on one side of the second P-type well to an upper portion of said P-type wall.
Claims21
A one-way switch having a gate referenced to a main back side electrode, comprising:
- an N-type substrate;
- a P-type anode layer covering a back side of the N-type substrate;
- a P-type wall surrounding lateral surfaces of the N-type substrate;
- first and second P-type wells formed on the front side of the N-type substrate;
- an N-type cathode region formed in the first P-type well;
- an N-type gate region formed in the second P-type well;
- a gate metallization that is in contact with and covers the N-type gate region and further in contact with and covering a portion of the second P-type well;
- and
- a P-type strip formed in the N-type substrate and connecting a portion on one side of the second P-type well to an upper portion of said P-type wall.
A bidirectional switch, comprising:
- a first integrated circuit chip including a cathode gate thyristor;
- and
- a second integrated circuit chip including a one-way switch having a gate referenced to a main back side electrode;
- wherein the one-way switch comprises:
- an N-type substrate;
- a P-type anode layer covering a back side of the N-type substrate;
- a P-type wall surrounding lateral surfaces of the N-type substrate;
- first and second P-type wells formed on the front side of the N-type substrate;
- an N-type cathode region formed in the first P-type well;
- an N-type gate region formed in the second P-type well;
- a gate metallization that is in contact with and covers the N-type gate region and is in contact with and covers a portion of the second P-type well;
- and
- a P-type strip formed in the N-type substrate and connecting a portion on one side of the second P-type well to an upper portion of said P-type wall;
- wherein a gate of the thyristor is connected to the gate metallization of the one-way switch;
- wherein an anode of the thyristor is connected to N-type cathode region of the one-way switch;
- and
- wherein a cathode of the thyristor is connected to the P-type anode layer of the one-way switch.
A one-way switch having a gate referenced to a main back side electrode, comprising:
- an N-type substrate;
- a P-type anode layer covering a back side of the N-type substrate;
- a P-type wall surrounding lateral surfaces of the N-type substrate;
- a first P-type well formed on the front side of the N-type substrate;
- an N-type cathode region formed in the first P-type well;
- a second P-type well formed on the front side of the N-type substrate;
- an N-type gate region formed in the second P-type well;
- and
- a gate metallization that is in contact with and covers the N-type gate region and is in contact with and covers a portion of the second P-type well.
Dependencies are inferred from the claim text.