Vertical fin field effect transistor device with reduced gate variation and reduced capacitance
AssigneeInternational Business Machines Corporation
InventorsJuntao Li, Kangguo Cheng, Choonghyun Lee, Shogo Mochizuki
Life of this patent
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Abstract
A method of forming a fin field effect transistor device is provided. The method includes forming a vertical fin on a substrate, and depositing a sidewall liner on exposed surfaces of the vertical fin. The method further includes removing a portion of the substrate below the sidewall liner to form a support pillar below the vertical fin. The method further includes laterally etching the support pillar to form a thinned support pillar, and forming a bottom source/drain layer on the substrate and the thinned support pillar, wherein the bottom source/drain layer has a non-uniform thickness.
Claims15
A method of forming a fin field effect transistor device, comprising:
- forming a vertical fin on a semiconductor substrate, wherein the vertical fin is the same material as the semiconductor substrate;
- depositing a sidewall liner on exposed surfaces of the vertical fin;
- removing a portion of the substrate below the sidewall liner to form a support pillar below the vertical fin;
- laterally etching the support pillar to form a thinned support pillar;
- and
- forming a bottom source/drain layer on the substrate and the thinned support pillar, wherein the bottom source/drain layer has a non-uniform thickness.
A method of forming a fin field effect transistor device, comprising:
- forming a vertical fin on a substrate;
- depositing a sidewall liner on exposed surfaces of the vertical fin;
- removing a portion of the substrate below the sidewall liner to form a support pillar below the vertical fin;
- laterally etching the support pillar to form a thinned support pillar;
- forming a bottom source/drain layer on the substrate and the thinned support pillar, wherein the bottom source/drain layer has a recessed dimple;
- and
- depositing a capping layer in the recessed dimple.
Dependencies are inferred from the claim text.