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US 10,707,327 B2Granted
MOSFET with reduced resistance
AssigneeGreat Wall Semiconductor Corporation
InventorsPatrick M. Shea, David N. Okada, Samuel J. Anderson
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor substrate including a doped region. A metal layer is formed on the doped region. An insulating layer covers the metal layer. The metal layer can serve as a buried metal layer which reduces electrical resistance between electrical charge in the doped region and adjacent contacts. The contacts can extend through the insulating layer between the buried metal layer and overlying metal stripes.
Claims16
A semiconductor device, comprising:
- a semiconductor substrate including a doped region of one of a source and a drain of the semiconductor device;
- a silicide layer formed on the doped region;
- a metal layer formed on the silicide layer, wherein the metal layer and the doped region each have a length extending in a first direction taken along a surface of the semiconductor substrate;
- an insulating layer formed over the metal layer;
- an electric contact formed through the insulating layer;
- and
- a metal stripe formed over the insulating layer and having a length extending in a second direction taken along the surface of the semiconductor substrate that is perpendicular to the first direction of the metal layer and the doped region, the electric contact physically extending between the metal stripe and the silicide layer, and providing electrical connection between the metal stripe and the doped region of the one of the source and drain of the semiconductor device.
4 more elements
A semiconductor device, comprising:
- a semiconductor substrate including a doped region of the semiconductor device, wherein the doped region has a length extending in a first direction taken along a surface of the semiconductor substrate;
- a silicide layer formed on the doped region of the semiconductor device;
- a metal layer formed on the silicide layer;
- an insulating layer covering the metal layer;
- an electric contact extending through the insulating layer;
- a metal stripe formed over the electric contact and having a length extending in the first direction taken with respect to the surface of the semiconductor substrate that is parallel to the metal layer, the electric contact physically extending between the metal stripe and the silicide layer, and providing electrical connection between the metal stripe and the doped region of the semiconductor device.
3 more elements
Dependencies are inferred from the claim text.