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US 10,707,322 B2Granted
Semiconductor devices and methods for fabricating the same
AssigneeVanguard International Semiconductor Corporation
InventorsChih-Yen Chen, Shin-Cheng Lin, Hsin-Chih Lin
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Abstract
A semiconductor device includes a channel layer disposed over a substrate, a barrier layer disposed over the channel layer, a gate electrode disposed over the barrier layer, and a pair of source/drain electrodes disposed on opposite sides of the gate electrode. The pair of source/drain electrodes extend through at least portions of the barrier layer. The semiconductor device also includes a lining layer conformally disposed on bottom portions of the pair of source/drain electrodes.
Claims20
A semiconductor device, comprising:
- a channel layer disposed over a substrate;
- a barrier layer disposed over the channel layer;
- a gate electrode disposed over the barrier layer;
- a doped compound semiconductor block disposed between the gate electrode and the barrier layer;
- a pair of source/drain electrodes disposed on opposite sides of the gate electrode and extending through at least portions of the barrier layer;
- and
- a lining layer conformally disposed on bottom portions of the pair of source/drain electrodes and sidewalls of the doped compound semiconductor block.
4 more elements
A semiconductor device, comprising:
- a channel layer disposed over a substrate;
- a barrier layer disposed over the channel layer;
- a gate electrode disposed over the barrier layer;
- a doped compound semiconductor block disposed between the gate electrode and the barrier layer;
- a pair of source/drain electrodes disposed on opposite sides of the gate electrode and extending through at least portions of the barrier layer;
- a lining layer conformally disposed on bottom portions of the pair of source/drain electrodes;
- and
- a protection layer conformally disposed on sidewalls of the doped compound semiconductor block and an upper surface of the barrier layer, wherein the protection layer interfaces with the lining layer at the upper surface of the barrier layer.
5 more elements
A method for fabricating a semiconductor device, comprising:
- forming a channel layer over a substrate;
- forming a barrier layer over the channel layer;
- recessing the barrier layer to form a pair of recesses through at least portions of the barrier layer;
- conformally forming a lining layer in the pair of recesses;
- forming a pair of source/drain electrodes in respective remaining portions of the pair of recesses;
- forming a doped compound semiconductor block and a gate electrode over the barrier layer, wherein the gate electrode is formed over the doped compound semiconductor block and the pair of source/drain electrodes are located on opposite sides of the gate electrode, and the lining layer is further formed on sidewalls and an upper surface of the doped compound semiconductor block;
- and
- removing a portion of the lining layer over the upper surface of the doped compound semiconductor block to expose a portion of the doped compound semiconductor block, wherein the gate electrode is formed over the exposed portion of the doped compound semiconductor block.
5 more elements
A method for fabricating a semiconductor device, comprising:
- forming a channel layer over a substrate;
- forming a barrier layer over the channel layer;
- recessing the barrier layer to form a pair of recesses through at least portions of the barrier layer;
- conformally forming a lining layer in the pair of recesses;
- forming a pair of source/drain electrodes in respective remaining portions of the pair of recesses;
- and
- forming a doped compound semiconductor block and a gate electrode over the barrier layer, wherein the gate electrode is formed over the doped compound semiconductor block and the pair of source/drain electrodes are located on opposite sides of the gate electrode;
- conformally forming a protection layer on sidewalls and an upper surface of the doped compound semiconductor block and an upper surface of the barrier layer before the barrier layer is recessed, and
- removing a portion of the protection layer over the upper surface of the doped compound semiconductor block to expose a portion of the doped compound semiconductor block, wherein the gate electrode is formed over the exposed portion of the doped compound semiconductor block.
6 more elements
Dependencies are inferred from the claim text.