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US 10,707,320 B2Granted
Field effect transistors with ferroelectric dielectric materials
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Ming Lin, Kai Tak Lam, Sai-Hooi Yeong, Chi On Chui, Ziwei Fang
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Abstract
A method of forming a semiconductor device includes forming a hafnium-containing layer over a semiconductor layer, simultaneously performing a thermal annealing process and applying an electrical field to the hafnium-containing layer to form a ferroelectric hafnium-containing layer, and forming a gate electrode over the ferroelectric hafnium-containing layer.
Claims20
A method, comprising:
- forming a hafnium-containing layer over a semiconductor layer, wherein forming the hafnium-containing layer includes simultaneously applying a first electric field having a first strength;
- simultaneously performing a thermal annealing process and applying a second electrical field having a second strength to the hafnium-containing layer to form a ferroelectric hafnium-containing layer, wherein the second strength differs from the first strength in magnitude;
- and
- forming a gate electrode over the ferroelectric hafnium-containing layer.
1 more element
A method, comprising:
- forming a ferroelectric gate dielectric layer over a semiconductor layer, wherein forming the ferroelectric gate dielectric layer includes:
- depositing a hafnium oxide-based layer over the semiconductor layer, wherein depositing the hafnium oxide-based layer includes simultaneously applying a first electric field to the hafnium oxide-based layer, thereby causing structural rearrangement of hafnium and oxygen atoms of the hafnium oxide-based layer;
- and
- annealing the hafnium oxide-based layer to form the ferroelectric gate dielectric layer, wherein annealing the hafnium oxide-based layer includes simultaneously applying a second electric field to the hafnium oxide-based layer while performing the annealing;
- forming a capping layer over the ferroelectric gate dielectric layer;
- forming a work function metal layer over the capping layer;
- and
- forming a bulk conductive layer over the work function metal layer.
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A method, comprising:
- depositing a hafnium oxide-containing gate dielectric layer over a semiconductor layer while applying a first electric field simultaneously;
- annealing the hafnium oxide-containing gate dielectric layer while applying a second electric field simultaneously;
- and
- forming a metal gate electrode over the annealed hafnium oxide-containing gate dielectric layer.
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Dependencies are inferred from the claim text.