Semiconductor device including a barrier diode

A semiconductor device, comprising:

• a first semiconductor region including a first region and a second region and being of a first conductivity type, the first region and the second region being arranged in a first direction;
• a first electrode provided on the first region;
• a second semiconductor region provided on the second region, the second semiconductor region being of a second conductivity type;
• a third semiconductor region provided on a portion of the second semiconductor region, the third semiconductor region being of the first conductivity type;
• a second electrode provided on the third semiconductor region, the second electrode being separated from the first electrode in the first direction;
• a third electrode directly contacted on another portion of the second semiconductor region and directly contacted on a portion of the first semiconductor region, the third electrode being separated from the first electrode and the second electrode;
• a first layer provided on the third electrode, the first layer including at least one selected from the group consisting of titanium, nickel, and vanadium;
• a second layer provided on the first layer, the second layer including silicon and at least one selected from the group consisting of nitrogen and oxygen;
• a fourth semiconductor region provided on the first region, the fourth semiconductor region being of the first conductivity type,
• an impurity concentration of the first conductivity type in the fourth semiconductor region being higher than an impurity concentration of the first conductivity type in the first semiconductor region,
• the first electrode being provided on the fourth semiconductor region,
• wherein the first semiconductor region, the second semiconductor region, the third semiconductor region, and the fourth semiconductor region include silicon, and
• the third electrode includes at least one selected from the group consisting of:
• aluminum, cobalt, tungsten.