Hybrid doping profile
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHenry Kwong, Chih-Yung Lin, Po-Nien Chen, Chen Hua Tsai
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Abstract
A semiconductor device having a hybrid doping distribution and a method of fabricating the semiconductor device are presented. The semiconductor device includes a gate disposed over an active semiconducting region and a first S/D region and a second S/D region each aligned to opposing sides of the gate side walls. The active semiconducting region has a doping profile that includes a first doping region at a first depth beneath the gate and having a first dopant concentration. The doping profile includes a second doping region at a second depth beneath the gate greater than the first depth and having a second dopant concentration less than the first dopant concentration.
Claims20
A semiconductor device, comprising:
- first and second source/drain regions disposed on a substrate;
- and
- a gate disposed on a semiconducting region and interposed between the first and second source/drain regions,
- wherein the semiconducting region comprises first and second doped regions and a doping profile across a plane through the first and second doped regions and perpendicular to a surface of the gate,
- wherein the first doped region has a first dopant concentration between 1×1021 atoms/cm3 and 5×1021 atoms/cm3 and the second doped region has a second dopant concentration between 1×1020 atoms/cm3 and 5×1020 atoms/cm3,
- wherein the doping profile comprises first and second peak dopant concentrations, and
- wherein the first peak dopant concentration is greater in magnitude and closer to the surface of the gate than the second peak dopant concentration.
A finFET device, comprising:
- a fin structure disposed on a substrate;
- a gate disposed on a first fin portion of the fin structure;
- and
- first and second epitaxial regions disposed on second and third fin portions of the fin structure, respectively,
- wherein the first fin portion comprises first and second doped regions and a doping profile across a plane extending from a surface of the first fin portion,
- wherein the first doped region has a first dopant concentration between 1×1021 atoms/cm3 and 5×1021 atoms/cm3 and the second doped region has a second dopant concentration between 1×1020 atoms/cm3 and 5×1020 atoms/cm3,
- wherein the doping profile comprises first and second peak dopant concentrations, and
- wherein the first peak dopant concentration is greater in magnitude and closer to the surface of the first fin portion than the second peak dopant concentration.
A method of fabricating a finFET device, the method comprising:
- forming a fin structure on a substrate;
- forming a gate over a first fin portion of the fin structure;
- forming source/drain regions on second and third fin portions of the fin structure;
- and
- doping first and second regions in the first fin portion with a first dopant concentration between 1×1021 atoms/cm3 and 5×1021 atoms/cm3 and a second dopant concentration between 1×1020 atoms/cm3 and 5×1020 atoms/cm3, respectively, to form a doping profile across a plane in the first fin portion,
- wherein the doping profile has first and second peak dopant concentrations corresponding to the first and second regions, respectively, and
- wherein the first peak dopant concentration is greater in magnitude than the second peak dopant concentration.
Dependencies are inferred from the claim text.