Thin film transistor, method of manufacturing thin film transistor, and display
AssigneeSony Corporation
InventorKoichi Amari
Life of this patent
Estimating the term…
Abstract
A thin film transistor includes a gate electrode, an insulation film disposed on the gate electrode, a semiconductor layer facing the gate electrode with the insulation film in between, and a source-drain wiring layer electrically coupled to the semiconductor layer, and including a first wiring layer and a second wiring layer. The first wiring layer is in contact with the semiconductor layer between the semiconductor layer and the insulation film, and is configured of a transparent electroconductive film. The second wiring layer is overlapped with a portion of the first wiring layer. Another semiconductor layer made of a material same as a material of the semiconductor layer is stacked on the second wiring layer.
Claims9
A thin film transistor, comprising:
- a gate electrode;
- an insulation film on the gate electrode;
- a first semiconductor layer, wherein the insulation film is between the gate electrode and the first semiconductor layer;
- a source-drain wiring layer electrically coupled to the first semiconductor layer, wherein
- the source-drain wiring layer includes a first layer and a second layer,
- the first layer of the source-drain wiring layer is between the first semiconductor layer and the insulation film,
- the first layer of the source-drain wiring layer comprises a transparent electroconductive film,
- a portion of the first layer of the source-drain wiring layer is covered by the first semiconductor layer, and
- a remaining portion of the first layer other than the portion covered by the first semiconductor layer is covered by the second layer of the source-drain wiring layer, such that two surfaces of the first layer are in contact with the second layer of the source-drain wiring layer;
- and
- a second semiconductor layer that comprises a first material, wherein
- a first surface of the second layer of the source-drain wiring layer is in contact with the second semiconductor layer,
- a second surface of the second layer of the source-drain wiring layer is in contact with the insulation film,
- the first surface is opposite to the second surface,
- the first material is same as a second material of the first semiconductor layer,
- the second semiconductor layer is on the second layer of the source-drain wiring layer, and
- the second layer of the source-drain wiring layer separates the first semiconductor layer and the second semiconductor layer.
A display, comprising:
- a thin film transistor that comprises:
- a gate electrode;
- an insulation film on the gate electrode;
- a first semiconductor layer, wherein the insulation film is between the gate electrode and the first semiconductor layer;
- a source-drain wiring layer electrically coupled to the first semiconductor layer, wherein
- the source-drain wiring layer includes a first layer and a second layer,
- the first layer of the source-drain wiring layer is between the first semiconductor layer and the insulation film,
- the first layer of the source-drain wiring layer comprises a transparent electroconductive film,
- a portion of the first layer of the source-drain wiring layer is covered by the first semiconductor layer, and
- a remaining portion of the first layer other than the portion covered by the first semiconductor layer is covered by the second layer of the source-drain wiring layer, such that two surfaces of the first layer are in contact with the second layer of the source-drain wiring layer;
- and
- a second semiconductor layer that comprises a first material, wherein
- a first surface of the second layer of the source-drain wiring layer is in contact with the second semiconductor layer,
- a second surface of the second layer of the source-drain wiring layer is in contact with the insulation film,
- the first surface is opposite to the second surface,
- the first material is same as a second material of the first semiconductor layer,
- the second semiconductor layer is on the second layer of the source-drain wiring layer, and
- the second layer of the source-drain wiring layer separates the first semiconductor layer and the second semiconductor layer.
Dependencies are inferred from the claim text.