Semiconductor device

A semiconductor device, comprising:

• a semiconductor substrate;
• a plurality of first columnar bodies having a peripheral edge, each of the columnar bodies spaced from one another on the semiconductor substrate, each including a first conductive layer extending from an upper end thereof in the depth direction of the semiconductor substrate;
• a base layer deposited about an outer peripheral surface of an upper end of the plurality of first columnar bodies;
• a gate layer adjacent to the base layer with a gate insulating film therebetween;
• a source layer connected to the base layer;
• a second columnar body, including a second conductive layer, surrounding an outer peripheral edge of the plurality of first columnar bodies and extending in the depth direction of the semiconductor substrate;
• a source wiring layer above the first conductive layer in each of the plurality of first columnar bodies and above at least a part of the second conductive layer, and electrically connected to the first conductive layer in each of the plurality of first columnar bodies and to the second conductive layer in the second columnar body;
• and
• a gate lead-out layer that extends from a first region surrounded by the second columnar body over the second columnar body to a second region outside the first region and is electrically connected to the gate layer, the gate lead-out layer being electrically separated from the first conductive layer in each of the first columnar bodies and the second conductive layer in the second columnar body.