High electron mobility transistor (HEMT)
AssigneeRFHIC Corporation
InventorWon Sang Lee
Life of this patent
Estimating the term…
Abstract
HEMT having a drain field plate is provided. The drain field plate is formed in the area between the gate and drain of a HEMT. The drain field plate includes a metal pad that has a larger projection area than the drain pad. The drain field plate and semiconductor layer disposed beneath the drain field plate form a metal-semiconductor (M-S) Schottky structure. The capacitance of the M-S Schottky structure generates capacitance in the semiconductor area, which increases the breakdown voltage of the transistor components of the HEMT. A portion of the substrate under the active area may be removed to thereby increase the heat conductivity and reduce the junction temperature of the transistor components of the HEMT.
Claims9
A semiconductor transistor, comprising:
- an epitaxial layer;
- a plurality of transistor components formed on a top surface of the epitaxial layer;
- a substrate formed on a bottom surface of the epitaxial layer and disposed on an area that is outside a region below a portion of the plurality of transistor components;
- an insulating layer formed of an electrically insulating material and disposed on a bottom surface of the substrate and a portion of a bottom surface of the epitaxial layer;
- at least one via extending through the epitaxial layer from a bottom surface of the insulating layer to a bottom surface of at least one of the plurality of transistor components;
- at least one metal layer formed on a bottom surface of the insulating layer, a side wall of the at least one via and the bottom surface of the at least one of the plurality of transistor components;
- and
- a solder paste applied to a bottom surface of the at least one metal layer.
A semiconductor transistor, comprising:
- an epitaxial layer;
- a plurality of transistor components formed on a top surface of the epitaxial layer;
- a substrate formed on a bottom surface of the epitaxial layer and disposed on an area that is outside a region below a portion of the plurality of transistor components;
- an insulating layer formed of an electrically insulating material and disposed on a bottom surface of the substrate and a portion of a bottom surface of the epitaxial layer;
- at least one via extending through the epitaxial layer from a bottom surface of the insulating layer to a bottom surface of at least one of the plurality of transistor components;
- a first metal layer formed on a bottom surface of the insulating layer, a side wall of the at least one via and a bottom surface of the at least one of the plurality of transistor components;
- and
- a second metal layer formed on a bottom surface of the first metal layer.
Dependencies are inferred from the claim text.