Semiconductor device

A semiconductor device, comprising:

• a first region including a first material including at least one selected from the group consisting of silicon carbide, silicon, carbon, and germanium, the first region including a first partial region, a second partial region, and a third partial region between the first partial region and the second partial region;
• a first electrode, a direction from the first partial region toward the first electrode being aligned with a first direction;
• a second electrode, a direction from the second partial region toward the second electrode being aligned with the first direction, a second direction from the first electrode toward the second electrode crossing the first direction;
• a third electrode, a direction from the third partial region toward the third electrode being aligned with the first direction, a position of the third electrode in the second direction being between a position of the first electrode in the second direction and a position of the second electrode in the second direction;
• a second region including Alx2Ga1-x2N (0<x2≤1), at least a portion of the second region being provided between the first electrode and the second electrode in the second direction;
• and
• a third region including at least one selected from the group consisting of silicon oxide, silicon oxynitride, silicon nitride, aluminum oxide, aluminum oxynitride, aluminum nitride, boron nitride, and hafnium oxide, at least a portion of the third region being provided between the first region and the second region.

A semiconductor device, comprising:

• a first region including a first material including at least one selected from the group consisting of silicon carbide, silicon, carbon, and germanium, the first region including a first partial region, a second partial region, and a third partial region between the first partial region and the second partial region;
• a first electrode, a direction from the first partial region toward the first electrode being aligned with a first direction;
• a second electrode, a direction from the second partial region toward the second electrode being aligned with the first direction, a second direction from the first electrode toward the second electrode crossing the first direction;
• a third electrode, a direction from the third partial region toward the third electrode being aligned with the first direction, a position of the third electrode in the second direction being between a position of the first electrode in the second direction and a position of the second electrode in the second direction;
• and
• a second region including Alx2Ga1-x2N (0<x2≤1), at least a portion of the second region being provided between the first electrode and the second electrode in the second direction,
• the first material having a first lattice constant in an axis direction crossing the first direction when unstrained,
• the Alx2Ga1-x2N (0<x2≤1) having a second lattice constant in the axis direction when unstrained,
• the second region having a second lattice length in the axis direction,
• a ratio of an absolute value of a difference between the first lattice constant and the second lattice length to an absolute value of a difference between the first lattice constant and the second lattice constant being 0.15 or more.