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US 10,707,308 B2Granted
Hetero-epitaxial output device array
AssigneesHangZhou HaiCun Information Technology Co., Ltd., Guobiao Zhang
InventorsGuobiao Zhang, Peter Y. Yu
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Abstract
A GaN-on-Si output transistor array comprises a plurality of small monolithic output transistors. The substrate surface has multiple grids, upon which multiple pieces of the small monolithic GaN films are grown epitaxially on the silicon substrate. Each small monolithic output transistor is formed in a respective small monolithic GaN film. By disabling defective transistors, the overall yield/reliability is improved.
Claims20
A hetero-epitaxial output device array, comprising:
- a substrate comprising a substrate material;
- a semiconductor film grown epitaxially on said substrate comprising a semiconductor material with different lattice constant and/or thermal expansion coefficient from said substrate material, wherein said semiconductor film comprises first, second and third device regions separated by at least a separation region, the semiconductor films in said first, second and third device regions are different from the semiconductor film in said separation region;
- first, second and third output devices respectively formed in said first, second and third device regions, wherein said first output device is a defective device and disabled, said second and third output devices are normal devices and communicatively coupled.
A hetero-epitaxial output device array, comprising:
- a substrate comprising a substrate material;
- a semiconductor film grown epitaxially on said substrate comprising a semiconductor material with different lattice constant and/or thermal expansion coefficient from said substrate material, wherein said semiconductor film comprises a plurality of device regions separated by at least a separation region, the semiconductor films in said plurality of device regions are different from the semiconductor film in said separation region;
- a plurality of output devices respectively formed in said plurality of device regions, said output devices including at least a defective output device and a plurality of normal output devices, wherein said defective output device is disabled;
- and, said normal output devices are communicatively coupled.
1 more element
A hetero-epitaxial semiconductor device, comprising:
- a substrate comprising a substrate material;
- a semiconductor film grown epitaxially on said substrate comprising a semiconductor material with different lattice constant and/or thermal expansion coefficient from said substrate material, wherein said semiconductor film comprises a plurality of device regions;
- at least a separation region surrounding selected one of said plurality of device regions;
- a boundary region surrounding all of said plurality of device regions;
- wherein the semiconductor films in said device regions, the semiconductor film in said separation region and the semiconductor film in said boundary region are different.
2 more elements
Dependencies are inferred from the claim text.