Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, comprising:

• performing ion implantation of an impurity into a SiC layer in a predetermined projected range;
• forming an oxide film by thermally oxidizing the SiC layer down to a deeper region than the projected range;
• removing the oxide film;
• and
• forming an electrode on the SiC layer,
• wherein when the oxide film is formed, oxidation is performed down to a region containing 90% or more of the impurity introduced through the ion implantation.

A method of manufacturing a semiconductor device, comprising:

• forming an n-type region by performing first ion implantation of n-type impurity into a SiC layer in a predetermined first projected range;
• forming a p-type region by performing second ion implantation of p-type impurity into the SiC layer in a predetermined second projected range;
• performing annealing at a temperature not lower than 1700° C. and not higher than 1900° C. after the first ion implantation and the second ion implantation;
• forming an oxide film by oxidizing the SiC layer down to a deeper region than the first projected range and the second projected range after the annealing;
• removing the oxide film;
• and
• forming an electrode on the n-type region and the p-type region.