Semiconductor device manufacturing method and semiconductor device

A semiconductor device manufacturing method comprising:

• a semiconductor substrate preparing step of preparing a semiconductor substrate having an exposed surface where a pn junction is exposed, the pn junction being formed at a junction portion between a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type opposite to the first conductivity type, the exposed surface having
• a first exposed region where the first semiconductor layer is exposed, and
• a second exposed region where the second semiconductor layer is exposed;
• a pretreatment step of performing a hydrophobic treatment only on the first exposed region of the exposed surface;
• an impurity supplying step of supplying an impurity of the first conductivity type to the first exposed region;
• a channel stopper forming step of irradiating the first exposed region with a laser beam to introduce the impurity of the first conductivity type into the first semiconductor layer, thus forming a channel stopper;
• and
• a glass layer forming step of forming a glass layer using a glass composition so as to cover the exposed surface.