Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsYosuke Sakurai, Yuichi Onozawa, Akio Nakagawa
Life of this patent
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Abstract
A semiconductor device having a trench gate structure is provided. A semiconductor device is provided, including: a first-conductivity-type drift region provided in a semiconductor substrate; a first-conductivity-type accumulation region provided above the drift region and having a higher doping concentration than the drift region; a second-conductivity-type base region provided above the accumulation region; and an electric-field relaxation layer provided between the accumulation region and the base region and having a lower doping concentration than the accumulation region. The electric-field relaxation layer may include a first-conductivity-type region including a region having a same doping concentration as the drift region.
Claims19
A semiconductor device comprising:
- a first-conductivity-type drift region provided in a semiconductor substrate;
- a first-conductivity-type accumulation region provided above the drift region and having a higher doping concentration than the drift region;
- a second-conductivity-type base region provided above the accumulation region;
- and
- an electric-field relaxation layer provided between the accumulation region and the base region and having a lower doping concentration than the accumulation region, wherein
- a thickness of the electric-field relaxation layer is equal to or smaller than a thickness of the accumulation region.
A semiconductor device comprising:
- a first-conductivity-type drift region provided in a semiconductor substrate;
- a first-conductivity-type accumulation region provided above the drift region and having a higher doping concentration than the drift region;
- a second-conductivity-type base region provided above the accumulation region;
- and
- an electric-field relaxation layer provided between the accumulation region and the base region and having a lower doping concentration than the accumulation region,
- wherein a thickness of the electric-field relaxation layer is 0.5 μm or more and less than 1.5 μm.
A semiconductor device comprising:
- a first-conductivity-type drift region provided in a semiconductor substrate;
- a first-conductivity-type accumulation region provided above the drift region and having a higher doping concentration than the drift region;
- a second-conductivity-type base region provided above the accumulation region;
- and
- an electric-field relaxation layer provided between the accumulation region and the base region and having a lower doping concentration than the accumulation region, wherein
- a peak of a doping concentration of the accumulation region is greater than a peak of a doping concentration of the base region.
Dependencies are inferred from the claim text.