Methods of forming semiconductor structures
AssigneeMicron Technology, Inc.
InventorsMichael Mutch, Manuj Nahar, Wayne I. Kinney
Life of this patent
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Abstract
A method includes forming a semiconductor structure. The structure includes a first material, a blocking material, a second material in an amorphous form, and a third material in an amorphous form. The blocking material is disposed between the first material and the second material. At least the second material and the third material each comprise silicon and/or germanium. The structure is exposed to a temperature above a crystallization temperature of the third material and below a crystallization temperature of the second material. Semiconductor structures, memory devices, and systems are also disclosed.
Claims18
A method, comprising:
- forming a structure comprising a first material, a blocking material, a second material in an amorphous form, and a third material in an amorphous form, the blocking material disposed between the first material and the second material, wherein at least the second material and the third material each comprise at least one element selected from the group consisting of silicon and germanium;
- and
- exposing the structure to a temperature above a crystallization temperature of the third material and below a crystallization temperature of the second material.
A method, comprising:
- forming a blocking material over a first material, the first material comprising at least one element selected from the group consisting of silicon and germanium;
- forming a second material in an amorphous form over the blocking material, the second material comprising at least one element selected from the group consisting of silicon and germanium;
- forming a third material in an amorphous form over the second material, the third material comprising at least one element selected from the group consisting of silicon and germanium, wherein the second material exhibits a crystallization temperature higher than crystallization temperatures of both the first material and the third material;
- and
- exposing the first material, the blocking material, the second material, and the third material to a temperature above the crystallization temperatures of both the first material and the third material and below the crystallization temperature of the second material.
A method, comprising:
- annealing a structure comprising a first material, a blocking material, a second material in an amorphous form, and a third material in an amorphous form at a temperature above crystallization temperatures of both the first material and the third material and below a crystallization temperature of the second material;
- wherein the first material, the second material, and the third material each comprise at least one element selected from the group consisting of silicon and germanium;
- wherein the blocking material is between the first material and the second material;
- and
- wherein the second material is between the blocking material and the third material.
Dependencies are inferred from the claim text.