Memory device and fabrication method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorAn-Hao Cheng
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate, a capacitor structure, a first contact plug, and a spacer. The capacitor structure is over the semiconductor substrate. The capacitor structure includes a bottom electrode, a capacitor dielectric, and a top electrode. The bottom electrode is over the semiconductor substrate. The capacitor dielectric is over a first portion of the bottom electrode. The top electrode is over the capacitor dielectric. The first contact plug is on and connected to a second portion of the bottom electrode. The spacer is on at least a sidewall of the second portion of the bottom electrode.
Claims20
A method for fabricating a semiconductor device, comprising:
- forming a capacitor stack and a gate stack over a first region and a second region of a semiconductor substrate respectively, wherein the capacitor stack has a bottom electrode, a dummy top electrode, and a capacitor dielectric between the bottom electrode and the dummy top electrode, and the gate stack has a gate dielectric and a dummy gate electrode over the gate dielectric;
- removing a first portion of the dummy top electrode and the dummy gate electrode to form a first opening in the capacitor stack and a second opening in the gate stack respectively;
- and
- forming a metal electrode and a metal gate electrode in the first opening and the second opening respectively.
A method for fabricating a semiconductor device, comprising:
- forming a capacitor stack over a semiconductor substrate, wherein the capacitor stack has a bottom electrode, a capacitor dielectric over the bottom electrode, a top electrode over the capacitor dielectric, and a dummy top electrode over the top electrode;
- etching a first portion of the dummy top electrode until reaching a top surface of the top electrode, wherein the top electrode has a higher etch resistance to etching the first portion of the dummy top electrode than that of the dummy top electrode, and etching the first portion of the dummy top electrode is performed such that a second portion of the dummy top electrode remains over the top electrode;
- and
- forming a metal electrode on the top surface of the top electrode.
A method for fabricating a semiconductor device, comprising:
- forming a capacitor stack over a semiconductor substrate, wherein the capacitor stack has a bottom electrode, a capacitor dielectric over the bottom electrode, and a dummy top electrode over the capacitor dielectric;
- removing a first portion of the dummy top electrode and a portion of the capacitor dielectric underlying the first portion of the dummy top electrode to form a first opening exposing the bottom electrode;
- forming a first interlayer dielectric in the first opening;
- and
- forming a contact plug connected to the bottom electrode in the first interlayer dielectric.
Dependencies are inferred from the claim text.