Semiconductor storage device
AssigneeToshiba Memory Corporation
InventorsToshihiko Nagase, Daisuke Watanabe, Koji Ueda, Tadashi Kai, Kazumasa Sunouchi
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AssigneeToshiba Memory Corporation
InventorsToshihiko Nagase, Daisuke Watanabe, Koji Ueda, Tadashi Kai, Kazumasa Sunouchi
Estimating the term…
According to one embodiment, a semiconductor storage device includes: a first memory cell and a second memory cell, each including a switching element and a resistance change element coupled to the switching element, and the first memory cell and the second memory cell being adjacent to each other; a non-active member having a switching function between the switching element of the first memory cell and the switching element of the second memory cell; and an insulator which covers at least one of an upper surface or a lower surface of the non-active member, a side surface of the non-active member, a side surface of the switching element of the first memory cell, and a side surface of the switching element of the second memory cell.
A semiconductor storage device comprising:
A semiconductor storage device comprising:
Dependencies are inferred from the claim text.