Display devices

A display device, comprising:

• a substrate;
• a first sub-pixel and a second sub-pixel disposed on the substrate, wherein the first sub-pixel and the second sub-pixel respectively correspond to two different colors,
• wherein the first sub-pixel comprises:
• a first light-emitting element comprising a portion of an N-type semiconductor layer;
• and
• a first wavelength conversion layer adjacent to the first light-emitting element, wherein a light emitted from the first light-emitting element passes through the first wavelength conversion layer;
• and
• wherein the second sub-pixel comprises:
• a second light-emitting element;
• and
• a second wavelength conversion layer adjacent to the second light-emitting element, wherein a light emitted from the second light-emitting element passes through the second wavelength conversion layer;
• an isolation structure disposed between the first light-emitting element and the second light-emitting element, wherein the isolation structure extends into the N-type semiconductor layer;
• a first insulating layer disposed between the first light-emitting element and the first wavelength conversion layer;
• and
• a second insulating layer disposed between the second light-emitting element and the second wavelength conversion layer, wherein the first insulating layer and the second insulating layer are separated by the isolation structure in a cross-sectional view,
• wherein a thickness of the first wavelength conversion layer and a thickness of the second wavelength conversion layer are different.

A display device, comprising:

• a substrate;
• a first sub-pixel and a second sub-pixel disposed on the substrate, wherein the first sub-pixel and the second sub-pixel respectively correspond to two different colors,
• wherein the first sub-pixel comprises:
• a first light-emitting element comprising a portion of an N-type semiconductor layer;
• and
• a first wavelength conversion layer adjacent to the first light-emitting element, wherein a light emitted from the first light-emitting element passes through the first wavelength conversion layer;
• and
• wherein the second sub-pixel comprises:
• a second light-emitting element;
• and
• a second wavelength conversion layer adjacent to the second light-emitting element, wherein a light emitted from the second light-emitting element passes through the second wavelength conversion layer;
• a first electrode disposed on the substrate, wherein the first light-emitting element and the second light-emitting element are electrically connected to the first electrode;
• an isolation structure disposed between the first light-emitting element and the second light-emitting element, wherein the isolation structure extends into the N-type semiconductor layer;
• a first insulating layer disposed between the first light-emitting element and the first wavelength conversion layer;
• and
• a second insulating layer disposed between the second light-emitting element and the second wavelength conversion layer, wherein the first insulating layer and the second insulating layer are separated by the isolation structure in a cross-sectional view.