Method of manufacturing solid-state image sensor
AssigneeSharp Kabushiki Kaisha
InventorsHiroyuki Kawano, Tomoaki Arakawa
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Abstract
The thickness of an embedding film in a pixel region is adjusted without adding a step. A method of manufacturing a solid-state image sensor (100) according to an embodiment of the present invention includes a development step of removing a photosensitive material (M) in a peripheral circuit region (30) and reducing and adjusting the thickness of the photosensitive material (M) that is in a pixel region (20) and on a multilayered wiring layer (5) to a desired film thickness.
Claims6
A method of manufacturing a solid-state image sensor that includes a pixel region and a peripheral circuit region in which a circuit for processing a signal from the pixel region is disposed, an optical waveguide being formed in the pixel region, the method comprising:
- an application step of applying a photosensitive material to a multilayered wiring layer that is formed over the pixel region and the peripheral circuit region and that has an opening for forming the optical waveguide;
- an exposure step of exposing a part of the photosensitive material to light;
- and
- a development step of removing the photosensitive material in the peripheral circuit region and reducing and adjusting a thickness of the photosensitive material that is in the pixel region and on the multilayered wiring layer to a desired film thickness.
Dependencies are inferred from the claim text.