Semiconductor devices including infrared sensor with infrared photodiode and color sensor with color photodiode

An image sensor, comprising:

• an infrared sensor including a first photodiode, a second photodiode, a third photodiode, and a first floating diffusion node;
• a color sensor on the infrared sensor, the color sensor including a first color photodiode under a red color filter, a second color photodiode under a green color filter, a third color photodiode under a blue color filter, and a second floating diffusion node;
• an intermediate connector connected to the first floating diffusion node and the second floating diffusion node;
• and
• a pixel circuit connected to the infrared sensor and the color sensor via the intermediate connector,
• wherein the first floating diffusion node is configured to receive electrical signals from each of the first photodiode, the second photodiode, and the third photodiode, and wherein the second floating diffusion node is configured to receive electrical signals from each of the first color photodiode, the second color photodiode, and the third color photodiode, such that the intermediate connector is an individual connector that is electrically coupled to each of the first, second, and third color photodiodes of the color sensor and the first, second, and third photodiodes of the infrared sensor and is configured to direct respective electrical signals from each of the first, second, and third color photodiodes of the color sensor and the first, second, and third photodiodes of the infrared sensor to the pixel circuit,
• wherein the infrared sensor is configured to sense an infra-red portion of an incident light and the color sensor is configured to sense a visible portion of the incident light.