Semiconductor device and manufacturing method, and electronic appliance
AssigneeSony Corporation
InventorsJun Ogi, Junichiro Fujimagari, Susumu Inoue, Atsushi Fujiwara
Life of this patent
Estimating the term…
Abstract
There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.
Claims10
A semiconductor device comprising:
- a plurality of bumps on a first semiconductor substrate;
- a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater than a minimum pitch of the bumps;
- and
- a dam that is formed on the first semiconductor substrate, wherein the dam is formed between the lens material and the plurality of bumps.
A method of manufacturing a semiconductor device comprising:
- forming a plurality of bumps on a first semiconductor substrate, and
- forming a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a hump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps;
- and
- forming a dam on the first semiconductor substrate, wherein the dam is formed between the lens material and the plurality of bumps.
Dependencies are inferred from the claim text.