Semiconductor device with multiple substrates electrically connected through an insulating film

An imaging device, comprising:

• a first substrate, including:
• a photodiode;
• at least one of a transfer transistor or a reset transistor;
• and
• a first electrode at a first surface side of the first substrate opposite to a light incident surface side;
• a second substrate;
• including:
• a second electrode at a first surface side of the second substrate;
• and
• a plurality of transistors;
• and
• an insulating thin film including first and second layers,
• wherein the first substrate and the second substrate are bonded to each other such that the first surface side of the first substrate and the first surface side of the second substrate are facing each other,
• wherein in a first connection region including the first electrode, the second electrode, and a non-conductive portion, the first electrode and the second electrode are bonded and electrically connected to each other, and the non-conductive portion is disposed at a bonding interface of the first electrode and the second electrode,
• wherein the first substrate includes the first insulating thin film layer,
• wherein the second substrate includes the second insulating thin film layer, and
• wherein the second electrode overlaps the first electrode such than an area of the second insulating thin film layer covered by the second electrode is greater than an area of the first insulating thin film layer covered by the first electrode in a cross-sectional view.