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US 10,707,255 B2Granted
Image sensors and methods of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorYun Ki Lee
Life of this patent
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Abstract
An image sensor includes a substrate including a light-receiving region and a light-shielding region, a device isolation pattern in the substrate of the light-receiving region to define active pixels, and a device isolation region in the substrate of the light-shielding region to define reference pixels. An isolation technique of the device isolation pattern is different from that of the device isolation region.
Claims20
An image sensor comprising:
- a substrate having a first surface and a second surface opposite to the first surface;
- a plurality of photoelectric conversion parts between the first and second surfaces;
- a light shielding pattern on the second surface of the substrate;
- first device isolation patterns in first trenches overlapped with the light shielding pattern, the first trenches disposed in the substrate;
- and
- second device isolation patterns in second trenches disposed between the photoelectric conversion parts and exposed by the light shielding pattern,
- wherein adjacent two of the second device isolation patterns are separated by a distance that is less than a distance separating adjacent two of the first device isolation patterns.
4 more elements
A semiconductor device comprising:
- a substrate;
- a light shielding pattern disposed on a surface of the substrate;
- a plurality of first photoelectric conversion parts provided in the substrate and overlapped with the light shielding pattern;
- a plurality of second photoelectric conversion parts provided in the substrate and exposed by the light shielding pattern;
- first trenches recessed from the surface of the substrate and disposed between the first photoelectric conversion parts;
- and
- second trenches recessed from the surface of the substrate and disposed between the second photoelectric conversion parts,
- wherein a distance between adjacent two of the second trenches is less than a distance between adjacent two of the first trenches.
5 more elements
An image sensor comprising:
- a substrate having a first surface and a second surface opposite to the first surface;
- a plurality of photoelectric conversion parts between the first and second surfaces, the photoelectric conversion parts the comprising a first photoelectric conversion part, a second photoelectric conversion part, and a third photoelectric conversion part;
- a first device isolation pattern between the first photoelectric conversion part and the second photoelectric conversion part in the substrate;
- a device isolation region between the second photoelectric conversion part and the third photoelectric conversion part in the substrate;
- and
- a light shielding pattern on the second surface of the substrate and overlapped with the first photoelectric conversion part, the second photoelectric conversion part, the third photoelectric conversion part, the first device isolation pattern, and the device isolation region,
- wherein the first device isolation pattern includes a different material from the device isolation region.
4 more elements
Dependencies are inferred from the claim text.