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US 10,707,254 B2Granted
Semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsTaeyon Lee, Gwideokryan Lee, Myungwon Lee
Life of this patent
Estimating the term…
Abstract
Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a first pixel and a second pixel from each other, a conductive pattern in the device isolation pattern, and a doping layer on a side surface of the device isolation pattern. The doping layer may have a conductivity type different from a conductivity type of the substrate.
Claims16
A semiconductor device comprising:
- a substrate;
- an insulative isolation pattern in the substrate, the insulative isolation pattern electrically isolating a first pixel and a second pixel from each other;
- a conductive pattern in the insulative isolation pattern;
- a doped layer on a side surface of the insulative isolation pattern;
- a photoelectric conversion layer that is on a first surface of the substrate and overlaps the first pixel and the second pixel;
- and
- color filters between the substrate and the photoelectric conversion layer,
- wherein the doped layer has a conductivity type different from that of the substrate.
5 more elements
A semiconductor device comprising:
- a substrate of a first conductivity type, the substrate including a first surface and a second surface opposite the first surface;
- a device isolation pattern in the substrate, the device isolation pattern comprising a conductive pattern and an insulating pattern;
- a charge-trapping pattern on a side surface of the device isolation pattern, the charge-trapping pattern comprising impurities having a second conductivity type that is different from the first conductivity type;
- an organic photoelectric conversion layer on the first surface of the substrate;
- and
- a lower electrode pattern between the first surface of the substrate and a lower surface of the organic photoelectric conversion layer;
- an upper electrode pattern on an upper surface of the organic photoelectric conversion layer;
- and
- a second interconnection pattern on the second surface of the substrate and electrically connected to the lower electrode pattern through the conductive pattern,
- wherein the insulating pattern is between the conductive pattern and the charge-trapping pattern.
7 more elements
An image sensor comprising:
- first and second photoelectric conversion regions in a substrate;
- a device isolation pattern between the first and second photoelectric conversion regions, the device isolation pattern comprising a conductive pattern and an insulating pattern between the conductive pattern and the substrate;
- a doped region between the substrate and the device isolation pattern, the doped region directly contacting the insulating pattern;
- a lower electrode pattern on a first surface of the substrate and electrically connected to the conductive pattern;
- a photoelectric conversion layer on the lower electrode pattern;
- a first interconnection pattern on a second surface of the substrate and electrically connected to the doped region;
- and
- a second interconnection pattern on the second surface of the substrate and electrically connected to the conductive pattern.
5 more elements
Dependencies are inferred from the claim text.