Back to results
US 10,707,253 B2Granted
Image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorsWonchul Choi, Min Jang, Yitae Kim, Heegeun Jeong
Life of this patent
Estimating the term…
Abstract
An image sensor includes a semiconductor substrate having first and second surfaces facing each other and a first device isolation layer provided in the semiconductor substrate. The first device isolation layer defines pixel regions of the semiconductor substrate and includes first and second portions crossing each other. The first and second portions are provided to surround one of the pixel regions, and the first portion is provided to extend from the first surface of the semiconductor substrate toward the second surface and to have a structure inclined relative to the first surface.
Claims19
An image sensor comprising:
- a semiconductor substrate having a first surface and a second surface facing each other;
- and
- a first device isolation layer which is provided in the semiconductor substrate to define pixel regions of the semiconductor substrate, and comprises a first portion extending in a first direction and a second portion extending in a second direction, the first direction and the second direction crossing each other,
- wherein the first portion and the second portion are provided to surround the pixel regions, respectively,
- the first portion comprises a structure inclined relative to the first surface, the structure comprising:
- two first sidewalls which penetrate the semiconductor substrate from the first surface to the second surface, and
- an insulation material disposed at least in a space formed by the two first sidewalls, the first surface, and the second surface,
- wherein each of the two first sidewalls is slanted in a same direction and inclined toward the first surface,
- a first angle is formed between the first surface and one first sidewall among the two first sidewalls, by an inclination of the one first sidewall toward the first surface,
- a second angle is formed between the first surface and another first sidewall among the two first sidewalls, by an inclination of the another first sidewall toward the first surface,
- the first angle is different from the second angle, and
- each of the first angle and the second angle is less than 90°.
9 more elements
An image sensor comprising:
- a semiconductor substrate having a first surface and a second surface opposing one another and pixel regions formed between the first surface and the second surface;
- and
- a first device isolation layer which extends in the semiconductor substrate between the first surface and the second surface and defines the pixel regions by surrounding each of the pixel regions, the first device isolation layer having a portion comprising a structure inclined toward the first surface,
- the structure comprising:
- two first sidewalls which penetrate the semiconductor substrate from the first surface to the second surface, and
- an insulation material disposed at least in a space formed by the two first sidewalls, the first surface, and the second surface,
- wherein each of the two first sidewalls is slanted in a same direction and inclined toward the first surface,
- a first angle is formed between the first surface and one first sidewall among the two first sidewalls, by an inclination of the one first sidewall toward the first surface,
- a second angle is formed between the first surface and another first sidewall among the two first sidewalls, by an inclination of the another first sidewall toward the first surface,
- the first angle is different from the second angle, and
- each of the first angle and the second angle is less than 90°.
8 more elements
An image sensor comprising:
- a semiconductor substrate having a first surface and a second surface facing each other;
- and
- a first device isolation layer which is provided in the semiconductor substrate to define pixel regions of the semiconductor substrate, and comprises a first portion extending in a first direction and a second portion extending in a second direction, the first direction and the second direction crossing each other, wherein
- the first portion and the second portion are provided to surround the pixel regions, respectively,
- the first portion is inclined relative to the first surface,
- the first portion has two opposite sidewalls which penetrate the semiconductor substrate from the first surface to the second surface,
- each of the two opposite sidewalls is slanted in a same direction and inclined toward the first surface,
- a first angle is formed between the first surface and a first sidewall of the two opposite sidewalls, by an inclination of the first sidewall toward the first surface,
- a second angle is formed between the first surface and a second sidewall of the two opposite sidewalls, by an inclination of the second sidewall toward the first surface, and
- the first angle is different from the second angle.
7 more elements
Dependencies are inferred from the claim text.