Imaging device
AssigneePanasonic Intellectual Property Management Co., Ltd.
InventorsSanshiro Shishido, Masashi Murakami, Kazuko Nishimura
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Abstract
In one general aspect, the techniques disclosed here feature an imaging device that includes: a semiconductor substrate; a first pixel cell including a first photoelectric converter in the semiconductor substrate, and a first capacitive element one end of which is electrically connected to the first photoelectric converter; and a second pixel cell including a second photoelectric converter in the semiconductor substrate. An area of the second photoelectric converter is larger than an area of the first photoelectric converter in a plan view.
Claims19
An imaging device comprising:
- a semiconductor substrate;
- a first pixel including
- a first photoelectric converter in the semiconductor substrate, and
- a first capacitive element one end of which is electrically connected to the first photoelectric converter;
- and
- a second pixel including a second photoelectric converter in the semiconductor substrate, wherein,
- the first pixel and the second pixel are adjacent to each other,
- the semiconductor substrate includes a trench isolation structure between the first photoelectric converter and the second photoelectric converter, and
- the first capacitive element at least partly overlaps, in a plan view, with the trench isolation structure.
An imaging device comprising:
- a semiconductor substrate including
- a first photoelectric converter,
- a second photoelectric converter adjacent to the first photoelectric converter, and
- a trench isolation structure between the first photoelectric converter and the second photoelectric converter;
- and
- a capacitive element one end of which is electrically connected to the first photoelectric converter, wherein,
- the first capacitive element at least partly overlaps, in a plan view, with the trench isolation structure.
An imaging device comprising:
- a semiconductor substrate;
- a first pixel including
- a first photoelectric converter in the semiconductor substrate, and
- a first capacitive element one end of which is electrically connected to the first photoelectric converter;
- and
- a second pixel including a second photoelectric converter in the semiconductor substrate, wherein,
- the first pixel and the second pixel are adjacent to each other,
- the first capacitive element at least partly overlaps, in a plan view, with the second photoelectric converter,
- each of the first pixel and the second pixel includes
- a floating diffusion,
- a reset transistor one of a source and a drain of which is electrically connected to the floating diffusion, and
- an amplification transistor having a gate electrically connected to the floating diffusion,
- the first pixel further includes a first transfer transistor, the first photoelectric converter being electrically connected to the floating diffusion of the first pixel via the first transfer transistor, and
- the second pixel further includes a second transfer transistor, the second photoelectric converter being electrically connected to the floating diffusion of the second pixel via the second transfer transistor.
Dependencies are inferred from the claim text.