Semiconductor device and method for manufacturing semiconductor device
AssigneeJapan Display Inc.
InventorsAkihiro Hanada, Masayoshi Fuchi
Life of this patent
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Abstract
According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer located above the insulating substrate, a second semiconductor layer located above the insulating substrate, an insulating layer which covers the first semiconductor layer and the second semiconductor layer, and includes a first contact hole reaching the first semiconductor layer and a second contact hole reaching the second semiconductor layer, a barrier layer which covers one of the first semiconductor layer inside the first contact hole and the second semiconductor layer inside the second contact hole, and a first conductive layer which is in contact with the barrier layer.
Claims6
An array substrate comprising:
- an insulating substrate;
- a first semiconductor layer located above the insulating substrate;
- a first insulating layer located above the first semiconductor layer;
- a second semiconductor layer located above the first insulating layer;
- a second insulating layer located above the second semiconductor layer;
- a first contact hole penetrating the first insulating layer and the second insulating layer, and reaching the first semiconductor layer;
- a second contact hole penetrating the second insulating layer, and reaching the second semiconductor layer;
- a barrier layer which is in contact with the second semiconductor layer in the second contact hole, and is conductive;
- a first conductive layer which is connected to the first semiconductor layer in the first contact hole;
- and
- a second conductive layer which is formed of a same material as a material of the first conductive layer and is connected to the barrier layer in the second contact hole.
Dependencies are inferred from the claim text.