Device, manufacturing method thereof, and electronic device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHidekazu Miyairi, Tomoaki Moriwaka
Life of this patent
Estimating the term…
Abstract
A wiring having excellent electrical characteristics is provided. A wiring having stable electrical characteristics is provided. A device is manufactured through the steps of forming a first insulating film over a substrate, forming a second insulating film over the first insulating film, removing part of the first insulating film and part of the second insulating film to form a first opening, forming a first conductor in the first opening and over a top surface of the second insulating film, and forming a second conductor by planarizing a surface of the first conductor so as to remove part of the first conductor.
Claims20
A device comprising:
- a first insulating film;
- a second insulating film over the first insulating film;
- a third insulating film over the second insulating film;
- a first opening in the first insulating film;
- a second opening in the second insulating film and the third insulating film, the second opening overlapping with the first opening;
- a first conductor;
- a second conductor;
- a first transistor including a semiconductor film;
- and
- a fourth insulating film between the first insulating film and the semiconductor film,
- wherein:
- a first part of the first conductor is in the first opening,
- a second part of the first conductor is in the second opening, and
- the second conductor is in the second opening and in contact with a top surface and a side surface of the second part of the first conductor.
A device comprising:
- a first insulating film;
- a second insulating film over the first insulating film;
- a third insulating film over the second insulating film;
- a first opening in the first insulating film;
- a second opening in the second insulating film and the third insulating film, the second opening overlapping with the first opening;
- a first conductor;
- a second conductor;
- a fourth insulating film over the third insulating film;
- and
- a first transistor including a semiconductor film, the semiconductor film being over the fourth insulating film,
- wherein:
- a first part of the first conductor is in the first opening,
- a second part of the first conductor is in the second opening, and
- the second conductor is in the second opening and in contact with a top surface and a side surface of the second part of the first conductor.
A device comprising:
- a first transistor;
- a first insulating film over the first transistor;
- a second insulating film over the first insulating film;
- a third insulating film over the second insulating film;
- a first opening in the first insulating film;
- a second opening in the second insulating film and the third insulating film, the second opening overlapping with the first opening;
- a first conductor;
- a second conductor;
- and
- a second transistor including a semiconductor film, the semiconductor film being over the third insulating film,
- wherein:
- a first part of the first conductor is in the first opening,
- a second part of the first conductor is in the second opening,
- the second conductor is in the second opening and in contact with a top surface and a side surface of the second part of the first conductor.
Dependencies are inferred from the claim text.