Source side program, method, and apparatus for 3D NAND
AssigneeSanDisk Technologies LLC
InventorsXiang Yang, Brian Murphy, Lito De La Rama
Life of this patent
Estimating the term…
Abstract
A source side programming method and system are provided. A bad trigger block, of a plurality of blocks of a memory array, may be detected by determining a threshold voltage distribution of a drain side select gate of a block and determining whether the distribution is abnormal. If the distribution is abnormal, the block is a bad trigger block which may cause a failure in another block. IF the block is a bad trigger block, source side programming is performed on at least one word line of the bad trigger block by applying a non-zero voltage to at least one source side word line of the bad trigger block via a source side line.
Claims12
A programming method comprising:
- determining that a block, of a plurality of blocks of a memory cell array, includes a fault;
- upon determination that the block includes a fault, marking the block as a bad block;
- detecting a threshold voltage distribution on a drain side select gate of the bad block;
- determining whether the threshold voltage distribution is abnormal;
- and
- if the threshold voltage distribution is abnormal, applying a voltage to at least one word line of the bad block via a source-side of the memory cell array.
A non-volatile memory storage system comprising:
- a memory cell array comprising a plurality of blocks of memory cells;
- and
- a programming circuit comprising:
- a marking circuit configured to, upon determination that a block, of the plurality of blocks, includes a fault, marking the block as a bad block;
- a detection circuit configured to detect a threshold voltage distribution on a drain side select gate of the bad block and to determine whether the threshold voltage distribution is abnormal;
- and
- a source-side programming circuit configure to, upon determination that the threshold voltage is abnormal, applying a voltage to at least one word line of the bad block via a source-side of the memory cell array.
A non-transitory computer-readable medium having recorded thereon a program which, when executed by a processor, causes the processor to execute a method comprising:
- determining that a block, of a plurality of blocks of a memory cell array, includes a fault;
- upon determination that the block includes a fault, marking the block as a bad block;
- detecting a threshold voltage distribution on a drain side select gate of the bad block;
- determining whether the threshold voltage distribution is abnormal;
- if the threshold voltage distribution is abnormal, applying a voltage to at least one word line of the bad block via a source-side of the memory cell array.
Dependencies are inferred from the claim text.