FINFET non-volatile semiconductor memory device and method of manufacturing the FINFET non-volatile semiconductor memory device
AssigneeRenesas Electronics Corporation
InventorShunichi Narumi
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Abstract
Characteristics of a semiconductor device having a nonvolatile memory are improved. A high dielectric constant film is provided on an insulating film between a memory gate electrode and a fin as components of a nonvolatile memory. The high dielectric constant film is provided over the top of the fin and the top of an element isolation region, but is not provided over a side surface of the fin. In this way, since the high dielectric constant film is provided over the top of the fin and the top of the element isolation region, it is possible to relax an electric field in the vicinity of each of the upper and lower corner portions of the fin, leading to an improvement in disturbance characteristics.
Claims7
A semiconductor device, comprising:
- a first fin extending in a first direction;
- an element isolation region extending in the first direction along the first fin on opposite sides of the first fin;
- a first gate electrode extending in a second direction intersecting the first direction and formed on the first fin and the element isolation region;
- a first insulating film formed between the first gate electrode and the first fin and including a charge storage part;
- and
- a high dielectric constant film formed on the first insulating film,
- wherein a surface of the element isolation region is lower than a top of the first fin, and
- wherein the high dielectric constant film comprises 1) a first portion provided on the top of the first fin and 2) a second portion provided on a top of the element isolation region while the high dielectric constant film is not provided along a side surface of the first fin between the first portion of the high dielectric constant film and the second portion of the high dielectric constant film.
Dependencies are inferred from the claim text.