Fabricating method of cobalt silicide layer coupled to contact plug

A fabricating method of a cobalt silicide layer coupled to a contact plug, comprising:

• providing a substrate disposed within a chamber;
• performing a deposition process comprising forming a cobalt layer to cover the substrate before a temperature of the substrate is increased to a temperature of the chamber, wherein the deposition process is performed when the temperature of the substrate is between 50° C. and 100° C., and the temperature of the chamber is between 300° C. and 350° C.;
• and
• after the deposition process, performing an annealing process when the temperature of the substrate is between 300° C. and 350° C. to transform the cobalt layer into a cobalt silicide layer, wherein the duration of the annealing process is between 50 seconds and 60 seconds.