Methods of forming an apparatus, and related apparatuses and electronic systems

A method of forming an apparatus, comprising:

• forming a conductive material over an upper surface of a metal silicide material at a lower end of an opening extending through at least one dielectric material through a non-conformal deposition process;
• forming a first metal nitride material over an upper surface of the conductive material within the opening through a non-conformal deposition process;
• forming a second metal nitride material over an upper surface of the first metal nitride material and side surfaces of the at least one dielectric material partially defining boundaries of the opening through a conformal deposition process;
• and
• forming a conductive structure over surfaces of the second metal nitride material within the opening.

An apparatus, comprising:

• at least one contact structure;
• and
• at least one filled opening vertically overlying and aligned with the at least one contact structure, the at least one filled opening extending through at least one dielectric material and comprising:
• a conductive material vertically overlying an upper surface of the at least one contact structure, upper portions of side surfaces of the at least one dielectric material substantially free of the conductive material horizontally thereover;
• a first metal nitride material vertically overlying an upper surface of the conductive material, the upper portions of the side surfaces of the at least one dielectric material substantially free of the first metal nitride material horizontally thereover;
• a second metal nitride material vertically overlying an upper surface of the first metal nitride material and horizontally overlying the upper portions of the side surfaces of the at least one dielectric material;
• and
• a conductive structure overlying surfaces of the second metal nitride material.

An electronic system, comprising:

• an input device;
• an output device;
• a processor device operably coupled to the input device and the output device;
• and
• a memory device operably coupled to the processor device and comprising:
• a contact structure;
• and
• at least one filled opening vertically overlying and aligned with the contact structure, the at least one filled opening extending through a dielectric material and comprising:
• a conductive material vertically overlying an upper boundary of the contact structure, upper regions of sidewalls of the dielectric material defining horizontal boundaries of the at least one filled opening substantially free of the conductive material thereon;
• a conductive metal nitride material vertically overlying an upper boundary of the conductive material, the upper regions of the sidewalls of the dielectric material substantially free of the conductive metal nitride material thereon;
• an additional conductive metal nitride material vertically overlying an upper boundary of the conductive metal nitride material and located on the upper regions of the sidewalls of the dielectric material;
• and
• a conductive structure on the additional conductive metal nitride material.