Back to results
US 10,707,201 B2Granted
Ultrasonic transducers in complementary metal oxide semiconductor (CMOS) wafers and related apparatus and methods
AssigneeButterfly Network, Inc.
InventorsJonathan M. Rothberg, Keith G. Fife, Nevada J. Sanchez, Susan A. Alie
Life of this patent
Estimating the term…
Abstract
Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.
Claims19
An ultrasound device, comprising:
- a complementary metal oxide semiconductor (CMOS) wafer comprising:
- an integrated circuit having a transistor gate layer;
- a plurality of metallization layers disposed above the transistor gate layer;
- and
- an ultrasonic transducer formed in the plurality of metallization layers above the transistor gate layer, the ultrasonic transducer comprising:
- a bottom electrode formed above a first of the plurality of metallization layers;
- a cavity disposed above the bottom electrode;
- and
- a top electrode disposed above the cavity and formed below a second of the plurality of metallization layers;
- wherein the top electrode comprises a plurality of vias disposed between the cavity and the second of the plurality of metallization layers.
7 more elements
An ultrasound device, comprising:
- a complementary metal oxide semiconductor (CMOS) wafer comprising:
- an integrated circuit having a transistor gate layer;
- a plurality of metallization layers disposed above the transistor gate layer;
- and
- an ultrasonic transducer formed in the plurality of metallization layers above the transistor gate layer, the ultrasonic transducer comprising:
- a bottom electrode formed above a first of the plurality of metallization layers;
- and
- a cavity disposed above the bottom electrode;
- wherein the bottom electrode comprises a plurality of vias disposed between the first of the plurality of metallization layers and the cavity.
6 more elements
Dependencies are inferred from the claim text.