3D stacked integrated circuits having functional blocks configured to provide redundancy sites

A three-dimensional stacked integrated circuit (3D SIC), comprising:

• a first 3D XPoint (3DXP) die;
• and
• a second 3DXP die,
• wherein the first 3DXP die and the second 3DXP die are stacked,
• wherein the 3D SIC is partitioned into a plurality of columns that are perpendicular to each of the stacked dies,
• wherein the 3D SIC is configured to replicate data stored in a failing part of a first column of the plurality of columns to an effective part of a second column of the plurality of columns, in response to a determination that the failing part is failing, the determination that the failing part is failing being based at least in part on a threshold number of failed operations, and
• wherein the effective part is configured to store the data as a redundant site of the data.

A three-dimensional stacked integrated circuit (3D SIC), comprising:

• a first 3D XPoint (3DXP) die;
• and
• a second 3DXP die,
• wherein the first 3DXP die is directly stacked onto the second 3DXP die without any die stacked between the first and the second 3DXP dies,
• wherein the 3D SIC is partitioned into a plurality of columns that are perpendicular to each of the stacked dies,
• wherein each column of the plurality of columns comprises a respective partition of the first 3DXP die, which is a first layer of the column, and a respective partition of the second 3DXP die, which is a second layer of the column,
• wherein the 3D SIC is configured to replicate data stored in the first layer of a first column to at least one of the first layer and the second layer of a second column, in response to a determination that the first layer of the first column is failing, the determination that the first layer is failing being based at least in part on a threshold number of failed operations, and
• wherein the at least one of the first layer and the second layer of the second column is configured to store the data as a redundant site of the data.