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US 10,707,187 B2Granted
Semiconductor device and method for manufacturing semiconductor device
AssigneeLG Chem, Ltd.
InventorsJung Hak Kim, Hee Jung Kim, Se Ra Kim, Jung Ho Jo, Kwang Joo Lee, Seung Hee Nam, Young Kook Kim
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Abstract
The present invention relates to a semiconductor device and a method of manufacturing a semiconductor device, and more particularly, to a semiconductor device capable of reducing the uppermost semiconductor chip damage and stably performing wire bonding even if an excessive force is applied during a die bonding process or a wire bonding process, and a method for manufacturing the semiconductor device.
Claims5
A semiconductor device comprising:
- a substrate;
- a first semiconductor chip die-bonded by a first die bonding layer onto the substrate;
- and
- a second semiconductor chip die-bonded by a second die bonding layer onto the first semiconductor chip, wherein the second die bonding layer is formed so as to mold a region not overlapping with a region of the first semiconductor chip in the lower region of the second semiconductor chip,
- wherein the first semiconductor chip is disposed in a recess extending into the second die bonding layer, and the second die bonding layer comprises a continuous layer,
- wherein the first die bonding layer and the second die bonding layer includes an adhesive layer containing an epoxy resin and a curing agent,
- wherein the adhesive layer contained in the second die-bonding layer has a viscosity before curing of 3000 Pa·s or less at 130° C., and
- wherein the adhesive layer contained in the second die-bonding layer includes a low-elastic, high-molecular weight resin that is blended with the epoxy resin, the low-elastic, high-molecular weight resin exhibiting viscoelasticity after formation of the crosslinked structure.
5 more elements
A semiconductor device, comprising:
- a substrate;
- a first semiconductor chip die-bonded by a first die bonding layer onto the substrate;
- and
- a second semiconductor chip die-bonded by a second die bonding layer onto the first semiconductor chip, wherein the second die bonding layer is formed so as to mold a region not overlapping with a region of the first semiconductor chip in the lower region of the second semiconductor chip,
- wherein the first semiconductor chip is disposed in a recess extending into the second die bonding layer, and the second die bonding layer comprises a continuous layer,
- wherein the first die bonding layer and the second die bonding layer includes an adhesive layer containing an epoxy resin and a curing agent, and
- wherein the adhesive layer contained in the second die-bonding layer includes a low-elastic, high-molecular weight resin that is blended with the epoxy resin, the low-elastic, high-molecular weight resin exhibiting viscoelasticity after formation of the crosslinked structure.
4 more elements
Dependencies are inferred from the claim text.