Impedance matching circuit for RF devices and method therefor

A radio frequency (RF) device comprising:

• an integrated passive device (IPD) comprising:
• a semiconductor substrate;
• a first conductive layer formed over the substrate;
• a second conductive layer formed over a first portion of the first conductive layer, a first portion of the second conductive layer coupled to the first conductive layer and comprising a first capacitor electrode;
• a third conductive layer formed over the first conductive layer and second conductive layer, a first portion of the third conductive layer comprising a second capacitor electrode and a second portion of the third conductive layer comprising a wire bond region;
• a fourth conductive layer formed on a bottom surface of the substrate, the fourth conductive layer coupled to the third conductive layer by way of a through-silicon-via (TSV);
• and
• a dielectric material disposed between the first capacitor electrode and the second capacitor electrode, the first capacitor electrode, the dielectric material, and the second capacitor electrode configured to form a first capacitor;
• and
• a semiconductor die comprising an RF power transistor, the semiconductor die coupled to the wire bond region of the IPD by way of a bond wire.

A method of forming integrated passive device (IPD) comprising:

• patterning a first conductive layer to form a shunt plate over a substrate;
• patterning a second conductive layer to form a first capacitor electrode, the first capacitor electrode located over a first portion of the shunt plate;
• forming a via to electrically connect the first capacitor electrode with the shunt plate;
• forming a dielectric layer over the second conductive layer, a first portion of the dielectric layer vertically aligned with the first capacitor electrode;
• patterning a third conductive layer over the dielectric layer, a first portion of the third conductive layer comprising a wire bond region and a second portion of the third conductive layer comprising a second capacitor electrode, the second capacitor electrode vertically aligned with the first capacitor electrode;
• attaching a first end of a bond wire to the third conductive layer at the wire bond region and a second end of the bond wire to a gate terminal of a power field-effect transistor (FET);
• depositing a fourth conductive layer on a bottom surface of the substrate;
• and
• forming a through-silicon-via (TSV) to electrically connect the shunt plate with the fourth conductive layer.

An integrated passive device (IPD) comprising:

• a semiconductor substrate;
• a first conductive layer formed over the substrate;
• a second conductive layer formed over a first portion of the first conductive layer, a first portion of the second conductive layer coupled to the first conductive layer and comprising a first capacitor electrode;
• a third conductive layer formed over the first conductive layer and second conductive layer, a first portion of the third conductive layer comprising a second capacitor electrode and a second portion of the third conductive layer comprising a wire bond region;
• a dielectric material disposed between the first capacitor electrode and the second capacitor electrode, the first capacitor electrode, the dielectric material, and the second capacitor electrode configured to form a first capacitor;
• and
• a bond wire attached to the third conductive layer at the wire bond region, an end of the bond wire is further attached to a gate terminal of a power field-effect transistor (FET) formed on a gallium nitride (GaN) substrate.

A radio frequency (RF) device comprising:

• an integrated passive device (IPD) comprising:
• a semiconductor substrate;
• a first conductive layer formed over the substrate;
• a second conductive layer formed over a first portion of the first conductive layer, a first portion of the second conductive layer coupled to the first conductive layer and comprising a first capacitor electrode;
• a third conductive layer formed over the first conductive layer and second conductive layer, a first portion of the third conductive layer comprising a second capacitor electrode and a second portion of the third conductive layer comprising a wire bond region;
• and
• a dielectric material disposed between the first capacitor electrode and the second capacitor electrode, the first capacitor electrode, the dielectric material, and the second capacitor electrode configured to form a first capacitor;
• and
• a semiconductor die comprising an RF power transistor, the semiconductor die comprising a gallium nitride (GaN) substrate and coupled to the wire bond region of the IPD by way of a bond wire, the bond wire attached to the semiconductor die at a gate terminal of the RF power transistor.