Semiconductor structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTung-Jiun Wu, Yinlung Lu, Mingni Chang, Ming-Yih Wang
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Abstract
A semiconductor structure including a MIM capacitor includes a substrate, a MIM capacitor disposed over the substrate, a first insulating layer disposed over the MIM capacitor, an ONON stack disposed over the first insulating layer, a connecting via disposed in the first insulating layer, and a connecting pad disposed in the ONON stack and in contact with the connecting via. The ONON stack covers sidewalls of the connecting pad and a portion of a top surface of the connecting pad.
Claims20
A semiconductor structure comprising:
- a substrate;
- a MIM capacitor disposed over the substrate;
- a first insulating layer disposed over the MIM capacitor;
- an oxide-nitride-oxide-nitride (ONON) stack disposed over the first insulating layer;
- a connecting via disposed in the first insulating layer;
- and
- a connecting pad disposed in the ONON stack and in contact with the connecting via,
- wherein the ONON stack covers sidewalls of the connecting pad and a portion of a top surface of the connecting pad, the ONON stack comprises a first silicon oxide layer, a first silicon nitride layer, a second silicon oxide layer and a second silicon nitride layer upwardly disposed over the insulating layer, and the first silicon oxide layer is in contact with the first insulating layer and a portion of the top surface of the connecting pad.
A semiconductor structure comprising:
- a substrate;
- a MIM capacitor disposed over the substrate;
- an insulating layer disposed over the MIM capacitor;
- an ONON stack disposed over the insulating layer;
- a connecting via disposed in the insulating layer;
- a connecting pad disposed in the ONON stack and in contact with the connecting via;
- an external conductor disposed over the connecting pad;
- and
- a polymer layer disposed over the ONON stack, wherein the ONON stack covers sidewalls and a portion of a top surface of the connecting pad and the polymer layer covers another portion of the top surface of the connecting pad.
A method of forming a semiconductor structure including a MIM capacitor, comprising:
- receiving a substrate comprising a MIM capacitor and an insulating layer formed thereon;
- forming a via opening penetrating the insulating layer;
- forming a first conductive layer over the insulating layer, wherein the via opening is filled with the first conductive layer and a void is formed in the first conductive layer correspondingly over the via opening;
- removing a portion of the first conductive layer and the void to form a connecting via and a recess over a top portion of the connecting via;
- forming a second conductive layer over the insulating layer to fill the recess;
- patterning the second conductive layer to form a connecting pad over the insulating layer, wherein the connecting pad is in contact with the connecting via;
- and
- forming an insulating stack over the connecting pad and the insulating layer.
Dependencies are inferred from the claim text.