Semiconductor device having lithography marks and resin portions in a cutting region

A semiconductor device, comprising:

• a semiconductor substrate comprising a first device region, a second device region, and a cutting region extending between the first device region and the second device region;
• a plurality of first lithography marks in the cutting region,
• a plurality of second lithography marks in the cutting region;
• a resin covering the first and second device regions and extending into portions of the cutting region with a gap formed therebetween over a central portion of the cutting region, wherein
• the resin in the cutting region does not overlie the plurality of first lithography marks, and overlie the plurality of second lithography marks,
• the resin in the cutting region includes a first portion and a second portion that extend from the first device region, the first portion overlying a first one of the plurality of second lithography marks, and the second portion being separated from the first portion and overlying a second one of the plurality of second lithography marks,
• a side of the first portion facing the second device region is closer to the center of the cutting region than a side of the first one of the plurality of second lithography marks facing the second device region is, and
• a side of the second portion facing the second device region is closer to the center of the cutting region than a side of the second one of the plurality of second lithography marks facing the second device region is.